Gallium Nitride Power Amplifier Designer

About Huawei Huawei is a leading global provider of information and communications technology (ICT) infrastructure and smart devices. With integrated solutions across four key domains – telecom networks, IT, smart devices, and cloud services – we are committed to bringing digital to every person, home and organization for a fully connected, intelligent world. At Huawei, innovation focuses on customer needs. We invest heavily in basic research, concentrating on technological breakthroughs that drive the world forward. We have more than 200,000 employees , of which 55% are employed in R&D , and we operate in more than 170 countries and regions. Huawei invests more than 20% of revenues in R&D every year: in the past 10 years our total R&D investments exceed 150B USD . By the end of 2023, Huawei held 140.000 active patents . The opportunity We are seeking a skilled and innovative transistor level Gallium Nitride PA Designer for next generation communication system. The successful candidate will play an important role in device estimation, circuit design and product development. This position offers an exciting opportunity to work based on the world’s leading gallium nitride technologies, contributing to the development of high power and high efficiency amplifier for cellular, base station even satellite applications. Key Responsibilities Lead the design, simulation, and optimization of gallium nitride power amplifier. Conduct research to investigate new gallium nitride technologies, materials, and methods to improve device. Perform chip-level trade-off analyses to determine circuit parameters (e.g., system link budget, die size, modulation schemes). Develop and execute test plans for laboratory and field trials to validate system performance, identify improvements, and troubleshoot issues. Stay up-to-date with the latest developments in gallium nitride power amplifier technologies and related fields. Contribute to patent filings, technical papers, and publications in peer-reviewed journals and conferences. Required Qualifications Master’s degree or Ph.D. in microwave engineering, physics, or related fields. Proven experience in the design and analysis of gallium nitride power amplifier. Proficiency with related simulation tools (e.g., ADS, HFSS, Cadence). Strong understanding of transistor level specifications and failure mechanism. Experience with chip testing, performance validation, and troubleshooting in both lab and field environments. Knowledge of wireless communication protocols, electromagnetic field theory, power amplifier theory. Strong problem-solving skills and ability to work independently and as part of a collaborative team. Excellent written and verbal communication skills. Preferred Qualifications Experience with the product level gallium nitride power amplifier design. Published papers or patents in the field of gallium nitride power amplifier or related technologies. What We Offer We offer you an exciting professional career in one of the leading and fastest growing multinational telecommunication companies, challenging work and a competitive salary package. Personal development is ensured through many training opportunities in Western Europe and abroad. J-18808-Ljbffr

Location: vimodrone, IT

Posted Date: 4/4/2025